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IBM Announces 5nm Breakthrough Using Silicon Nanosheets

IBM Announces 5nm Breakthrough Using Silicon Nanosheets
IBM-Feature

IBM’s newest 5nm achievement illustrates the promise of new manufacturing technologies and the long-term usefulness of gate-all-around FET structures.

The post appeared first on .

IBM Announces 5nm Breakthrough Using Silicon Nanosheets

(image)

IBM’s newest 5nm achievement illustrates the promise of new manufacturing technologies and the long-term usefulness of gate-all-around FET structures.

The post appeared first on .

IBM Announces 5nm Breakthrough Using Silicon Nanosheets

IBM researchers announce major breakthrough in phase change memory

IBM researchers announce major breakthrough in phase change memory
IBM-PCM-Feature
Researchers from IBM have unveiled a breakthrough in phase-change memory. Their work could lead to dramatic density improvements for the proposed next-gen memory standard and make it far more competitive compared to NAND flash and DRAM.

IBM researchers announce major breakthrough in phase change memory

(image)
Researchers from IBM have unveiled a breakthrough in phase-change memory. Their work could lead to dramatic density improvements for the proposed next-gen memory standard and make it far more competitive compared to NAND flash and DRAM.
IBM researchers announce major breakthrough in phase change memory

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